Effect of niobium doping on excitonic dynamics in MoSe₂

Abstract Transition metal dichalcogenides have emerged as attractive two-dimensional semiconductors for future electronic and optoelectronic applications. Their charge transport properties, such as conductivity and the type of charge carriers, can be effectively controlled by substitutional doping of the transition metal atoms. However, the effects of doping on the excitonic properties, particularly their dynamical properties, have been less studied. Using Nb-doped MoSe2 as a case study, we experimentally investigate the effect of doping on excitonic dynamics in transition metal dichalcogenides. Transient absorption measurements are used to directly compare the dynamical properties of excitons in Nb-doped MoSe2 across monolayer, bilayer, and bulk flakes with their undoped counterparts. The exciton lifetimes in Nb-doped flakes are significantly shorter than those in their undoped counterparts. This effect is attributed to the trapping of excitons in defect states introduced by Nb impurities. These results reveal an important consequence of Nb doping on excitonic dynamics in transition metal dichalcogenides.