Recent advances in application-oriented new generationdiluted magnetic semiconductors

Diluted ferromagnetic semiconductors (DMSs) have attracted widespread attention in last decades, owingto their potential applications in spintronic devices. But classical group-III-IV, and -V elements based DMSmaterials, such as (Ga,Mn)As which depend on heterovalent (Ga3+, Mn2+) doping, cannot separately controlcarrier and spin doping, and have seriously limited chemical solubilities, which are disadvantages for furtherimproving the Curie temperatures. To overcome these difficulties, a new-generation DMS with independent spinand charge doping have been designed and synthesized. Their representatives are I-II-V based Li(Zn,Mn)As andII-II-V based (Ba,K)(Zn,Mn)2As2. In these new materials, doping isovalent Zn2+ and Mn2+ introduces onlyspins, while doping heterovalent non-magnetic elements introduces only charge. As a result, (Ba,K)(Zn,Mn)2As2achieves Curie temperature of 230 K, a new record among DMS where ferromagnetic orderings are mediated byitinerate carriers. Herein, we summarize the recent advances in the new-generation DMS materials. Thediscovery and synthesis of several typical new-generation DMS materials are introduced. Physical properties arestudied by using muon spin relaxation, angle-resolved photoemission spectroscopy and pair distributionfunction. The physical and chemical pressure effects on the title materials are demonstrated. The Andreevreflection junction based on single crystal and the measurement of spin polarization are exhibited. In the end,we demonstrate the potential multiple-parameter heterojunctions with DMSs superconductors andantiferromagnetic materials