Fabrication process and variation rule of electrical properties of CrSi thin film resistors

CrSi film is sputtered on SiO2 by reactive magnetron sputtering method, on which TIW layer is deposited as the resistance end. After lithographic patterns and corrosion, metal layer is deposited and etched as input and output to test the electrical parameters of the film. It is discovered that the target's component determines the electrical parameters' adjustable range. It is possible to stabilize the temperature coefficient of resistance of CrSi film in +/- 10ppm/degrees C by adjusting the process parameters, resulting in reduction of fluctuations compared with the widely used +/- 20ppm/degrees C, and obtainment of high-precision CrSi film resistors. In addition, microscopic factors such as grain size and spacing must be considered. CrSi grains, which transmit electrons, and the SiN groups, which are dispersed along the grain spacing and permit electron tunnelling, dictate the electrical characteristics of the film. The law of process adjustment parameters is clarified through the comparison of different component targets, which has important reference value and guiding significance for the future research of similar targets or high-precision resistors.