A Study of Deposition/Annealing Cyclic Method to Enhance the Performance of Zinc-Tin Oxide Thin-Film Transistor by Ultrasonic Spray Pyrolysis Deposition

In this study, we use nonvacuum solution-based ultrasonic spray pyrolysis deposition (USPD) to deposit zinc-tin oxide (ZTO) thin films to serve as a channel layer of the thin-film transistor (TFT). Additionally, USPD was employed as a deposition method, involving an iterative process of thin-film deposition and subsequent postannealing. This method significantly reduces defects and enhances electrical properties. The electrical characteristics reveal a threshold voltage of - 1.19 V, an ON/OFF current ratio exceeds seven orders, and a field-effect mobility reaches 172.5 cm(2) V( -1)1 s(-1) . Additionally, a negative bias lighting stress test of only a 0.44-V shift is achieved.