Near room-temperature ferromagnetism in Bi_xCr_1-xTe₂ epitaxial thin films grown on GaAs(111)B by molecular beam epitaxy

Mn-doped monoclinic beta-(Ga1-xMnx)(2)O-3 thin films were epitaxially grown on alpha-Al2O3 (0001) substrates by alternately depositing Ga2O3 and Mn layers using the laser molecular beam epitaxy technique. The crystal lattice expands and the energy band gap shrinks with the increase of Mn content for Mn ions incorporated into the Ga site. Ferromagnetism appears even above room temperature when x >= 0.11 and can be remarkably enhanced with the continuous increase of Mn indicated by the increased magnetization and coercivity. This study presents a promising candidate for use in spintronic devices that are capable of working at room temperature.