Silicon nanowires analyzed by x-ray photoelectron spectroscopy

Ghulam Farid,Stefanos Chaitoglou,Roger Amade,Rogelio Ospina,Enric Bertran-Serra

SURFACE SCIENCE SPECTRA（2024）

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摘要

Silicon nanowires were characterized by x-ray photoelectron spectroscopy with an Al K-alpha (1486.6 eV) excitation source. The sample was fixed to a stainless-steel sample holder with a copper double-sided adhesive tape. Survey spectrum and C 1s, O 1s, and Si 2p core-level spectra were acquired.

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关键词

Silicon,Nanowires,XPS

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