MXene hybrid nanocomposites enable high performance memory devices and artificial synapse applications

Brain-inspired parallel computing based on a floating gate organic field effect transistor (FG-OFET) memory device, which has gathered considerable attention by virtue of its simple fabrication, scalable neuromorphic computing and low cost, is a promising technology for effectively handling large amounts of informational data. However, the FG-OFET memory device often shows a limited memory window and low cycling stability, which can hardly satisfy the requirements for high-performance synaptic electronics. Here, we developed a non-volatile transistor memory (NVTM) device with hybrid nanocomposites (defined as the MXP) as the floating gate layer, through facilely intercalating poly(3-trifluoromethylstyrene) (PTF) nanoparticles into Ti3C2Tx-MXene nanosheets. The device showed a high on/off current ratio (approximate to 10(5)), large memory window (>47.8 V), cyclic endurance (>10(3) cycles) and stable retention (>10(5) s), which could be ascribed to the MXP with high specific surface area and electrical affinity. Furthermore, the synaptic functions, such as excitatory postsynaptic current/inhibitory postsynaptic current (EPSC/IPSC), paired-pulse facilitation (PPF) and long-term potentiation/depression (LTP/LTD), were also successfully emulated by the NVTMs. This work not only provides a promising design strategy of organic-inorganic-hybrid two-dimensional (2D) nanocomposites for advanced device applications, but also paves a way for upgrading the synaptic FG-OFET based neuromorphic hardware systems.