Antiferroelectric properties of Dy modified PBZST ceramics with a secondary phase

PZ-based ceramics play a key role in electronic components, and the development and optimization of them have always been a research hotspot. Herein, a conventional solid -state approach was employed to fabricate the PBDZST (Pb0.96-1.5xBa0.04DyxZr0.65Sn0.3Ti0.05) ceramics with varying Dy content (x = 0, 0.01, 0.02, 0.04), aiming at regulating the antiferroelectric phase from ferroelectric phase in PBZST. Through XRD and SEM analysis, it was observed that the introduction of Dy leads to the precipitation of a second phase at grain boundaries. The most dense ceramic was obtained when x = 0.01, featuring standard double hysteresis loops. The results emphasize the antiferroelectricity of PBDZST under an appropriate content of secondary phases.