Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice
SEMICONDUCTORS(2023)
摘要
The results of a study of nitrogen-containing active regions based on superlattices grown on GaAs substrates are presented. Active regions based on alternating InAs and GaAsN layers were fabricated by molecular-beam epitaxy using a nitrogen plasma source. Based on the XRD analysis, the thicknesses and average composition of superlattice layers are estimated. The study of dark-field images obtained by transmission electron microscopy showed the presence of interdiffusion of InAs into GaAsN. The results of a study of the photoluminescence and electroluminescence spectra at different pump levels are presented. Efficient electroluminescence is demonstrated near 1150 nm with a full width at half-maximum of about similar to 90 meV.
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关键词
Superlattices,molecular beam epitaxy,gallium arsenide,dilute nitride,GaAsN,InAs
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