Degradation of InGaN/GaN Quantum Well UV LEDs Caused by Short-Term Exposure to Current

A comparative analysis of the initial stages of degradation of ultraviolet and blue LED structures with InGaN/GaN quantum wells is carried out. In the mode of accelerated aging, the structures were subjected to short-term, sequential exposure to currents of 80-190 mA at forward bias. The exposure time did not exceed three hours. There was an increase (up to 20%) in the external quantum efficiency. The most probable physical mechanisms explaining the changes in InGaN/GaN LEDs are presented and possible ways to slow down the aging of UV LEDs are outlined.