TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices

Jereme Neuendank,Fahad Al Mamun,Hugh Barnaby,Stefano Bonaldo,Matthew Spear, Trace Wallace, Daniel Loveless, Jacob Pew, Mohamed Nour, Pete Manos, Zach Giorno, Usman Suriono, Mike Chambers, Steve Kosier

2023 IEEE International Integrated Reliability Workshop (IIRW)（2023）

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摘要

90-nm MOSFETs from SkyWater are tested under X-ray. Low frequency noise measurements evidence random telegraph noise at various gate voltages in both pre-and post-rad conditions, revealing pre-existing and TID-induced prominent defects.

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关键词

Total Ionizing Dose,TID,Random Telegraph Noise,RTN,Random Telegraph Signal,RTS

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