GaN Multichannel Devices with Latch-Induced Sub-60 Mv/decade Subthreshold Slope.Martin Kuball, Akhil Kumar Shaji,Stefano Dalcanale,Michael Uren,James Pomeroy,Matthew Smith, Justine Parke,Robert Howellcrossref（2024）引用 0|浏览13关键词Double-Gate Transistors,Tunnel Field-Effect Transistors,AlGaN/GaN HEMTs,GaNAI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
