High-performance 4H-Sic EUV Photodiode with Lateral P-N Junction Fabricated by Selective-area Ion Implantation
IEEE Electron Device Letters（2024）
关键词
Silicon carbide,Ultraviolet sources,Temperature measurement,Detectors,Ion implantation,Capacitance-voltage characteristics,Capacitance,4H-SiC,photodiode,extreme ultraviolet,ion implantation
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