Excellent Energy Storage Performance of ZnO doped (Pb,La)(Zr,Sn,Ti)O₃ Based Antiferroelectric Ceramics at an Ultra‐Low Sintering Temperature of 940 °C

Abstract(Pb,La)(Zr,Sn,Ti)O3‐based antiferroelectric ceramics have excellent energy storage performance(more than 90% efficiency), which make them have great application advantages in the field of ceramic capacitors. However, the sintering temperature of (Pb,La)(Zr,Sn,Ti)O3‐based antiferroelectric ceramics is generally above 1250 °C, which limits application as a material for ceramic capacitors. Cu inner electrode has a low co‐firing temperature and high conductivity and a low cost price, making it more competitive in the field of ceramic capacitor inner electrode. Therefore, the first step is to reduce the sintering temperature of (Pb,La)(Zr,Sn,Ti)O3‐based ceramics to below 1000 °C(co‐firing temperature with Cu inner electrode), which is the key and difficult point. In this paper, Pb0.94La0.02Sr0.04(Zr0.45Sn0.47Ti0.08)0.995O3(PLSZST) antiferroelectric ceramics are doped with ZnO, which effectively reduce the sintering temperature. Among them, PLSZST‐1 wt% ZnO is sintered at an ultra‐low sintering temperature (TSintering = 940 °C), which is 330 °C lower than that of PLSZST(TSintering = 1270 °C) without doping ZnO. At the same time, PLSZST‐1 wt%ZnO obtain a recoverable energy density of 4.26J cm−3 and an energy efficiency of 95.5% at 230 kV cm−1. The pulse discharge energy density (Wdis = 3.92 J cm−3) and discharge time (t0.9 = 351 ns) are obtained at 220 kV cm−1, and the current density (CD = 1338A cm−2) and power density (PD = 134MW cm−3) are obtained at 200 kV cm−1. The results provide a possible material basis for Cu internal electrode ceramic capacitors.