Comparing the Optical Characteristics of Dielectric Mirrors Fabricated by PECVD from Different Precursors: Monosilane and Tetraethoxysilane

The influence of the application of silicon oxide produced from a gas precursor, i.e., monosilane SiH4 and an organosilicon precursor, i.e., tetraethoxysilane (TEOS) on the optical characteristics of dielectric Bragg mirrors is compared. The use of tetraethoxysilane as a precursor in plasma-enhanced chemical vapor deposition (PECVD) demonstrates a decrease in the average roughness of the deposited film. The same method of film deposition also makes it possible to fabricate a SiNx/SiOx pair in one process chamber without breaking vacuum. It is experimentally shown that a mirror fabricated from a TEOS precursor possesses better characteristics than a mirror fabricated using monosilane, thus, the reflectivity increases by 20