A Charge Plasma Based Dual Buried Gates Power MOSFET with Improved Figure of Merits

In this work, we design and simulate a high performance electrostatically doped dual buried gates power MOSFET (EDDBGP-MOS) structure. The novelty of the proposed device is three folds. Firstly, the n + source and P + body regions of the device are realized using induced charge plasma by employing metal electrodes on the silicon film. The device thus reduces the risk of random doping fluctuations and the formation of highly abrupt junctions during fabrication. The high temperature processes involved in defining the doped regions are not required, thus providing low thermal budget. Secondly, the Gaussian hole plasma profile in the p body region allows increase in drift doping concentration from 5 × 1015/cm3 to 7 × 1015/cm3 resulting in Ron reduction to almost 24