Laser Annealed Two Dimensional SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation
arxiv(2024)
摘要
Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important
technique, particularly when tightly controlled heating and melting are
necessary. In the realm of semiconductor technologies, the significance of
laser annealing (NLA) grows in tandem with the escalating intricacy of
integration schemes in nano-scaled devices. Silicon-germanium alloys have been
studied for decades for their compatibility with silicon devices. Indeed, they
enable the manipulation of properties like strain, carrier mobilities and
bandgap. Laser melting on such type of layers, however results, up to now, in
the development of extended defects and poor control over layer morphology. In
our study, we investigate the laser melting of 700 nm thick relaxed
silicon-germanium samples coated with SiO2 nano-arrays, achieving a precise
control of the melting process, without observing the formation of extended
defects at the interface left by the liquid front. We found the geometrical
parameters of the silicon oxide having an impact on the thermal budget samples
see, influencing melt threshold, melt depth and germanium distribution.
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