Understanding phase evolution of ferroelectric Hf_0.5Zr_0.5O₂ thin films with Al₂O₃ and Y₂O₃ inserted layers

Jonghoon Shin,Haengha Seo,Kun Hee Ye,Yoon Ho Jang,Dae Seon Kwon,Junil Lim,Tae Kyun Kim,Heewon Paik,Haewon Song,Ha Ni Kim,Seungyong Byun, Seong Jae Shin,Kyung Do Kim,Yong Bin Lee,In Soo Lee,Jung-Hae Choi,Cheol Seong Hwang

Journal of Materials Chemistry C（2024）

引用 0|浏览3

暂无评分

摘要

This study investigates the insertion traits of the Al2O3 and Y2O3 insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf0.5Zr0.5O2 (HZO) thin films grown by atomic layer deposition (ALD).

查看译文

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要

Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layers

Understanding phase evolution of ferroelectric Hf_0.5Zr_0.5O₂ thin films with Al₂O₃ and Y₂O₃ inserted layers