Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy

B. R. Semyagin,A. V. Kolesnikov, M. A. Putyato,V. V. Preobrazhenskii, T. B. Popova, V. I. Ushanov,V. V. Chaldyshev

Semiconductors（2024）

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摘要

by molecular-beam epitaxy we have grown epitaxial layers of GaAs1–xBix solid solutions with a bismuth content of 0 < x < 0.02. Structural and optical properties of the layers were investigated. We determine the influence of the bismuth flux and substrate temperature on the bismuth incorporation into the growing layers.

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关键词

gallium arsenide,bismuth,molecular-beam epitaxy,bandgap

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