A $D$ -Band Swing Boosting Power Detector With 25-KV/W Intrinsic Responsivity and 2.1-pW/Hz $^{0.5}$ NEP in 22-nm CMOS FDSOI

IEEE Microwave and Wireless Technology Letters（2024）

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摘要

A D -band swing-boosting CMOS power detector (PD) is proposed and implemented in 22-nm CMOS FDSOI technology. Using transistor parasitics and an added source inductor, the proposed design can achieve 6.5 times swing boosting compared to the traditional PD designs. The measured responsivity and noise equivalent power (NEP) is 25 KV/W and 2.1 pW/Hz

$^{0.5}$

$^{^{^{^{}}}}$

respectively. Compared to the state of the art, the proposed PD provides the highest responsivity for CMOS PD at the D -band.

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关键词

D-band,MOSFET power detector (PD),receiver,wireless sensing

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