Electrodeposition mechanism of Cu2CoSnS4 thin films onto FTO-coated glass: Effect of some additives

In this study, we synthesized thin films of semiconductor Cu2CoSnS4 (CCTS). We investigated the mechanism of CCTS electrodeposition precursor onto fluorine-doped tin oxide (FTO) surface. This investigation utilized various mixed additives (Trisodium citrate, Glycine, and Boric acid) through voltammetric and chronoamperometric techniques. The polarization cathodic indicated that the additives narrowing the potential range for electrodeposition of the four elements. The reduction of S2O32− was mainly induced by the effect of metal ions. The current transient was analyzed using the Astley and Scharifker-Hills models. Trisodium citrate electrolyte showed an instantaneous model followed by 3D diffusion-limited growth. Both trisodium citrate mixed with glycine and trisodium citrate mixed with boric acid shifted towards the progressive nucleation model. Trisodium citrate with tartaric acid showed a strong agreement with progressive nucleation. In-situ electrochemical impedance spectroscopy (EIS) evaluated a low charge transfer resistance for CCTS precursor electrodeposition in trisodium citrate electrolyte. The X-ray diffraction and Raman analysis study revealed the stannite structure of the obtained Cu2CoSnS4 thin film. The morphological properties and thickness of the films were investigated using a scanning electron microscope (SEM). The compositions were determined using energy dispersive spectroscopy which indicated different atomic ratios of Cu-Co-Sn-S. The maximum absorption was observed within the 1.5 eV range for the film deposited in the Trisodium citrate bath, as determined by spectroscopic ellipsometry.