Hole Virtual Gate Model Explaining Surface-Related Dynamic R ON in p-GaN Power HEMTsNicolò Zagni,Giovanni Verzellesi,Alessandro Bertacchini, Mattia Borgarino,Ferdinando Iucolano,Alessandro ChiniIEEE Electron Device Letters(2024)引用 0|浏览0暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要