Optimization of The Thickness of Single-Layer Antireflection SiO _2 Coating on a Silicon Photodiode Depending of the Characteristics of Incident Light

Theoretical investigations of the dependence of the optimal thickness of a one-layer antireflection SiO _2 coating on a silicon photodiode on the characteristics of the light incident to the photodiode. It is shown that the optimal thickness of the one-layer antireflection SiO _2 coating for different angular distributions of intensity increases the quantum efficiency of the photodiode by up to 1.1 times in comparison with the classical one-layer antireflection coating with a thickness λ/4n , which is optimal in the case of the normal incidence of monochromatic light.