Fast response SBPDs based on low-pressure CVD-grown β-Ga2O3

In recent years, Ga2O3 solar-blind photodetectors (SBPDs) have received great attention for their potential applications in civil and military exploration. In this work, we reported the epitaxial growth of β-Ga2O3 thin films on c-plane sapphire using gallium (Ga) and oxygen (O2) as source precursors. Compared with traditional solar-blind-ultraviolet photodetector based on β-Ga2O3 film, the prepared solar-blind-ultraviolet photodetector exhibits a higher photo-responsivity of 75.4 A/W, a larger on/off ratio (I245 nm, Ilight/Idark ∼ 103), and a faster response speed with an arises time of 0.29 s and a decay time of 0.31 s at 20 V. The detection rate is 5.9 × 1011 Jones. This work is of theoretical and practical significance for the development of high-wavelength deep ultraviolet photodetectors and provides a reference idea for the future realization of energy-efficient photodetectors with low-cost fabrication.