Electrical characterization of BaBi₄Zr₂Sn₂O₁₅ complex ferroelectric system

BaBi4Zr2Sn2O15, a modified ceramic sample belonging to the oxide family of layered ferroelectrics, is synthesized using the mixed oxide process after firing for calcination at 810 degrees C for 6 hrs. XRD study of the compound exhibits the growth of an orthorhombic single-phase structure at atmospheric temperature. The electrical properties of the sample are investigated in a broad temperature range (30-500 degrees C) and frequency range (100 Hz - 10(6) Hz). The dielectric properties recommend the transition from ferro to paraelectric state at 410 degrees C which is much more than room temperature. The impact of frequency and temperature on complex immittance parameters (impedance and modulus) are analyzed by an impedance analyzer in broad frequencies and temperature ranges. The electrical properties show; (i) the existence of semiconductor-like negative temperature coefficients of resistance behavior, (ii) evidence of electrical relaxation phenomena as a function of temperature, and (iii) the existence of single electrical relaxation ascribed to the existence of grain contribution to the electric properties.