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Gamma-Ray Irradiation Induced Dielectric Loss of SiO2/Si Heterostructures in Through-Silicon Vias (tsvs) by Forming Border Traps

ACS APPLIED ELECTRONIC MATERIALS(2024)

Cited 27|Views33
Key words
gamma-ray irradiation,material defect,through-siliconvia (TSV),dielectric loss,interfacial relaxation,DLTS
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