Temperature-dependent capacitance-voltage characteristics of -Ga₂O₃ Schottky barrier diodes with (001) epitaxial grown layer using MOCVD

We investigate the thin film quality of the epitaxial layer on Sn-doped (001)-oriented beta-Ga2O3 single crystal substrates. The homoepitaxial layer is grown by metal organic chemical vapor deposition (MOCVD) at 700 degrees C, 800 degrees C, 900 degrees C, and 1000 degrees C. To evaluate the grown epitaxial layer at different temperatures, the depletion layer of the Schottky barrier diode (SBD) is studied using the impedance-phase angle (Z-theta) via capacitance-voltage measurements. In addition, the Z-theta value is correlated with X-ray diffraction and transmission electron microscopy. The results show that the epitaxial layer grown at 900 degrees C has the best epitaxial layer quality. It is presumed that Z-theta measurements are a feasible and reliable approach to evaluate the epitaxial layer in Ga2O3-related devices.