Phase transitions in ferroelectric ZrO2 thin films
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING(2024)
摘要
In this work, the formation of the orthorhombic phase of ZrO2 together with the minor monoclinic phase were elucidated by X-ray diffraction and transmission electron microscopy. Moreover, oxidized W can be responsible for the formation of oxygen vacancies in the ZrO2 through oxygen scavenging. The ferroelectric properties of the W/ZrO2/W film capacitors were investigated through piezoresponse force microscopy (PFM) and polarizationvoltage measurements. A second-order phase transition from the polar orthorhombic phase to the non-polar tetragonal phase was observed. Density functional theory calculations confirm our experimental results and propose that oxygen vacancies are responsible for the Curie-Weiss temperature of 130 degrees C, significantly lower than the theoretical value for the bulk.
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关键词
Orthorhombic ZrO2,Phase transitions,Ferroelectricity,Oxygen vacancies
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