Studies of Degradation Silicon Heterojunction Solar Cells by 1 MeV Electrons Irradiation

V. S. Kalinovskii, E. I. Terukov, S. N. Abolmasov, K. K. Prudchenko, E. V. Kontrosh, I. A. Tolkachev, A. V. Kochergin,A. S. Titov, O. K. Ataboev

Applied Solar Energy（2024）

引用 0|浏览2

暂无评分

摘要

This article attempts to assess the radiation resistance of heterostructure silicon solar cells to the effects of 1 MeV electrons and discusses their prospects for power supply of the global low-orbit satellite communication system. The data obtained from this study allow us to identify the most promising types of heterostructure silicon solar cells for use in low-orbit spacecraft. These are n-α-Si:H-(p)c-Si:Ga-p-α-Si:H and n-µc-Si:H-(p)c-Si:Ga-p-α-Si:H solar cells. The degradation in efficiency of these structures was less than 30

查看译文

关键词

heterostructure silicon solar cells,HJT solar cells,saturation currents,I–V characteristics of solar cells,efficiency,radiation resistance,1 MeV electrons,spacecraft,low-orbit satellite communications

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要