订阅小程序
旧版功能

Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer

Zhichao Chen,Lie Cai,Kai Niu,Chaozhi Xu,Haoxiang Lin,Pengpeng Ren,Dong Sun,Haifeng Lin

JOURNAL OF ELECTRONIC MATERIALS（2024）

引用 0|浏览10
关键词
E-mode,AlGaN/GaN HEMT,P-GaN cap,graded AlGaN barrier layer,N-well
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要