Analytical Modeling of Depletion-Mode MOSHEMT Device for High-Temperature Applications
IEEE Access（2024）
关键词
HEMTs,Mathematical models,Wide band gap semiconductors,Aluminum gallium nitride,MODFETs,Gallium nitride,Electrons,Photonic band gap,Semiconductor devices,Analytical models,High-temperature superconductors,Temperature measurement,Thermal conductivity,AlGaN,GaN,MOSHEMT,2DEG,wide-bandgap,semiconductor device
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