Probing switchable valley-related Hall effects in 2D magnetic MXenes
arxiv(2024)
摘要
The search for two-dimensional materials with exotic valley-dependent
properties has attracted rapid attention as they are fundamentally intriguing
and practically appealing for nanoscale device applications. Here, using
first-principles calculations, we report the identification of promising
intrinsic valley-related switchable Hall effects in Cr2CSF. With a high
out-of-plane magnetic anisotropy, Cr2CSF is a ferrovalley semiconductor with
spontaneously polarized valleys having a valley polarization of 27.1 meV in the
conduction band. This facilitates the observation of an intrinsic anomalous
valley Hall (AVH) effect that is manipulated under an in-plane electric field.
The underlying physics of spontaneous valley polarization is also discussed
based on the SOC Hamiltonian model. Furthermore, on application of
unidirectional compressive strain, Cr2CSF is further transitioned from the AVH
phase to a long-sought quasi-half valley metal state. Here, only the electrons
are valley polarized such that holes and electrons carriers are separated under
the in-plane electric field. Our work enriches materials with the
valley-related Hall effects and provides a platform for interplay among
valleytronics and spintronics.
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