Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K

The DC and low -frequency noise performance of an array of 800 parallel Forksheet MOSFETs were investigated by performing measurements over a wide temperature range from 300 K to 4 K. The array structure allowed to measure a representative average performance of the devices and provided a large effective area for 1/f noise analysis. Results showed an improvement in the saturation drain current when going from room temperature to cryogenic temperatures, with the subthreshold swing saturating around 100 K and the threshold voltage shifting by approximately 150 mV, following similar trends observed in Silicon cryogenic electronics. Additionally, the study confirms that the noise at cryogenic temperatures does not follow the commonly assumed linear scaling with temperature. This deviation from the linear scaling has been associated with the presence of tail states at the interface in bulk and silicon -on -insulator (SOI) devices. These results suggest that the excess 1/f noise in this advanced device architecture is not related to the device architecture but rather to the microscopic material properties of semiconductor/dielectric interfaces.