Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures

We perform trap density (Dt) extraction through admittance measurements on amorphous Indium-Gallium-ZincOxide (a-IGZO) thin films using multi -finger MOS structures. We investigate the impact of channel length (Lch) on C -V and G -V characteristics and demonstrate a reliable trap density extraction method in short channel devices. The method is validated for pure and Magnesium-doped a-IGZO (Mg:IGZO). The experimental results are consistent with simulations based on a distributed network model.