Multi-ion controllable metal halide ionic structure for selective short- and long-term memorable synaptic devices

Development of memristors based on artificial synapses is a significant advancement in modeling biological synapses that utilize short-term plasticity (STP) and long-term plasticity (LTP). Herein, we present a novel multimode mechanism memristor based on Cs2AgI3 with 1D [AgI4](3-) tetrahedral nanowire that allows for the simultaneous manipulation of temporally expanded plasticity through controllable multi-ions. The ion -transport mechanisms are controlled by the energy barriers of vacancy transportation and metal-ion injection, depending on the bias voltage. Finally, the conductance states of the multimode memristors are determined through the distinct rate-determining steps of the dominant ion migrations. To realize a multimode conductance state, the LTP is further expanded to short-lived (SL) and long-lasting (LL) plasticity by adjusting the length of the memory timescale through bias voltage. SL-LTP maintains a relatively low value (X0.4 mS) for similar to 750 ms, whereas the conductance of LL-LTP gradually decreases from approximate to 1.5 mS to approximate to 0.5 mS over 23 h. The accuracies achieved for each respective mode simulation in the perception rate of an artificial neural network based on multimode memristors are X91% and X88%. Therefore, the Cs2AgI3 memristor is capable of a new breakthrough in the development of next -generation neuromorphic computing as a multimode perceptron by simultaneously utilizing temporal plasticity.