Enhancement of photodetection performance of Ga2O3/Si heterojunction solar-blind photodetector using high resistance homogeneous interlayer

Creating homojunctions using Ga2O3 material presents a significant challenge, primarily because of the inherent difficulty in achieving stable p-type Ga2O3. The pn heterojunctions based on n-Ga2O3 materials offer a promising alternative for developing solar-blind photodetectors. In this work, our strategy is to fabricate a n-Ga2O3/p-Si heterojunction solar-blind photodetector with interface layers of high resistance and low resistance through using a magnetron sputtering system. The results indicate that a Ga2O3 layer with high resistance as an interface layer contributes to broadening the width of space charge region of this pn heterojunction, resulting in the enhancement of photodetection responsivity (61.7 mA/W @-5 V). Furthermore, the pn heterojunction photodetector exhibits a photo-response to 254 nm UV light at zero bias voltage, showcasing robust stability. This suggests significant potential for applications in the challenging environments. The synergistic blend of the enhanced photodetector performance and the well-established technology of Si integrated circuits is generating considerable enthusiasm.