Enhanced electrocatalytic HER performances of metal free SiC/g-C3N5 heterostructures

Here in, we have fabricated a composite of SiC and g-C3N5 to form a noble-metal-free heterostructure as SiC/g-C3N5 for electrochemical HER activity. More than a few characterization techniques were investigated for their structural properties, such as the XRD, UV- DRS, FT-IR, FE-SEM, HR-TEM, and XPS measurements respectively. The HER reaction of SiC/g-C3N5 heterostructure with an overpotential obtained from Tafel slope of 81 mV/dec vs RHE at 10 mA/cm2 which is much better than that of the pristine SiC material. This work entitles that the effective approach for the rational design of g-C3N5-based electrocatalysts, for future developments in metal-free electrocatalysts.