Heavily boron-doped polycrystalline diamond films: Microstructure, chemical composition investigation and plasma in-situ diagnostics

The introduction of boron brings excellent electrical conductivity to diamond films, but also induces uncontrollability of the doping process. Therefore, it is crucial to the monitor of the growth and doping processes. In this work, to establish the correlation between the gas-phase chemical reactions and the microstructure characteristics of heavily boron-doped diamond (BDD) films, the plasma reactions in the chemical vapor deposition (CVD) process of BDD films were in-situ diagnosed and monitored using optical emission spectroscopy (OES), and the effect of different B/C ratios (from 10,000 to 60,000 ppm) on the microstructure, chemical composition were investigated comprehensively. As the B/C ratio increases, the insufficient gas-phase excitation and the “hydrogen abstraction” reaction of BH species lead to a massive loss of H species in the gas-phase of plasma, which is unfavorable for the diamond growth, weakens the etching on sp2 carbon, induces the development of defects and seriously damages the diamond films quality. The in-situ diagnostics and monitoring of the plasma state can realize the optimization of the growth and doping process for heavily doped polycrystalline BDD films, which is highly significant for its preparation and application.