Quantum transport properties of the topological Dirac Semimetal α-Sn
arxiv(2024)
摘要
We report measurements of the electrical resistivity (ρ) and
thermoelectric power (S) in a thin film of strained single-crystalline
α-Sn grown by molecular beam epitaxy on an insulating substrate. The
temperature (T) dependence of the resistivity of α-Sn can be divided
into two regions:below T* ≈ 135 K ρ(T) shows a metallic-like
behaviour, while above this temperature an increasing contribution from
thermally excited holes to electrical transport is observed. However, it is
still dominated by highly mobile electrons, resulting in a negative sign of the
Seebeck coefficient above T = 47 K. In the low temperature limit, a small
positive S likely reflects the persistent contribution from low-mobility holes
or the positive phonon-drag thermopower. In the presence of the magnetic field
(B) applied along an electric field or thermal gradient, we note a negative
magnetoresistance or a negative slope of S(B), respectively. The theoretical
prediction for the former (calculated using density functional theory) agrees
well with the experiment. However, these characteristics quickly disappear when
the magnetic field is deviated from an orientation parallel to the electrical
field or the thermal gradient. We indicate that the behaviour of the electrical
resistivity and thermoelectric power can be explained in terms of the chiral
current arising from the topologically non-trivial electronic structure of
α-Sn. Its decay at high temperature is a consequence of the decreasing
ratio between the intervalley Weyl relaxation time to the Drude scattering
time.
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