Effect of CeO2 doping on the microscopic morphology and electrical properties of ZnO-based linear resistors

ZnO–MgO–Al2O3–TiO2–SiO2 linear resistors with different CeO2 doping were synthesized using the solid-phase synthesis method. The impact of CeO2 doping on the microstructure and electrical performances of ZnO-based linear resistors were comprehensively discussed. The impedance test results show that the doping of Ce4+ reduces the grain boundary resistivity from 250.81 kΩ⋅cm to 4.17 kΩ⋅cm, which improves the stability of the resistance. Moreover, the samples exhibited remarkable linear V-I characteristics. When the CeO2 content was 1.00 mol