Experimental Demonstration of Coplanar NbO_x Mott Memristors for Spiking Neurons

Threshold switching (TS) devices based on NbO ₂ Mott memristors have become important candidates for constructing artificial neurons in neuromorphic computing hardware. However, there is lack of research on the impact of device structure on performance of NbO _x neurons. In this letter, NbO _x -based TS devices are experimentally achieved by utilizing coplanar electrodes. We also propose a method to improve the reliability by using the passivation layer that can prevent the oxidation of the NbO _x . Nonlinear neural dynamics are experimentally implemented using artificial neuron circuits. The success of coplanar device facilitates the future realization of multi-terminal NbO _x neurons and provides a basis for further investigation on TS mechanism of NbO _x Mott memristors.