Unique Consecutive RTN Characteristics Coupled with Ferroelectric Nanodomain Switching in Advanced Fe-FinFETs

In this work, a consecutive random telegraph noise (RTN), characterized by a gradual current decay after an abrupt current spike as the time elapses, is firstly observed and further explored in advanced hafnium zirconium oxide (HZO) ferroelectric FinFETs (Fe-FinFETs). To elucidate this novel RTN behavior with consecutive distribution of current states, a new RTN model is proposed, incorporating the charge-coulomb interaction between local nanodomains and traps. By implementing a more deterministic FE polarization switching, the disturbed variation in multi-threshold voltage ( V _T ) states shows an improved V _T variation distribution tail behavior, which demonstrates a monotonic trend with the increasing current. This work demonstrates and clarifies the peculiar consecutive RTN observed in multi- V _T Fe-FinFET, offering insights into the optimization of read margin for high-reliability ultra-scale memory applications.