A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS

David Starke, Florian Vogelsang, Jonathan Bott, Jan Schopfel,Christian Bredendiek,Klaus Aufinger,Nils Pohl

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES(2024)

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摘要
Commercial frequency-modulated continuous-wave (FMCW) radar systems are well-established in the frequency range up to 100 GHz, with some exceptions operating in the D-band and above. There are multiple advantages of operating at higher frequencies, such as the use of on-chip antennas and, therefore, the omission of high-frequency substrates for frontend designs, which enables the fabrication of low-cost FR4 radar frontends. This work features a 360 GHz fully integrated signal source and breakout circuits at 90 and 180 GHz, manufactured in the 90 nm B12HFC SiGe:C BiCMOS technology. We present a 90-GHz wideband Colpitts-Clapp VCO combined with a static frequency divider for stabilization purposes, achieving a tuning range (TR) of 24.1 GHz and an output power of up to 6.43 dBm. Adding a frequency-doubling and amplification stage expands this circuit, achieving 51.7-GHz TR and up to 3.8-dBm output power. The 360 GHz signal source adds another frequency-doubling stage consisting of a wideband differential hybrid coupler for quadrature signal generation, amplifier chains, and two push-push frequency doublers, generating a pseudodifferential output signal with up to -1.8 dBm output power and a frequency TR of 106.7 GHz (29.9%).
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关键词
B12HFC,Colpitts-Clapp,frequency doubler,frequency multiplier,frequency-modulated continuous-wave (FMCW) radar,integrated microwave circuits and systems,Lange couplers,millimeter-wave (mmWave) and terahertz components,power amplifier (PA) circuits,semiconductor sources for terahertz,SiGe heterojunction bipolar transistors (SiGe HBTs) circuits,signal generation,signal sources,silicon germanium (SiGe) BiCMOS,static frequency divider,voltage-controlled oscillator (VCO),wideband circuits
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