A Self-Consistent Approach Based on Bayesian Deconvolution for Trapping Time Constant Analysis: A Demonstration to Analyze ΔVTH Transients in P-Gan Gate Power HEMTs
IEEE Transactions on Electron Devices（2024）
Key words
Logic gates,Threshold voltage,Electron traps,Transient analysis,MODFETs,HEMTs,Deconvolution,Bayesian deconvolution,p-GaN gate HEMTs,threshold voltage shift,time-constant extraction
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