Development of Enhancement-Mode GaN P-Fet with Post-Etch Wet Treatment on P-Gan Gate HEMT Epi-Wafer
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
Logic gates,Gallium nitride,Surface morphology,HEMTs,Transmission electron microscopy,Surface roughness,Rough surfaces,Current density,E-mode,gallium nitride (GaN) p-channel field-effect transistor (p-FET),gate recess,interface,post-etch wet treatment
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