Strain-Compensated Type-II $\text{GaAs}_{1-x}\text{Bi}_{x}/\text{GaN}_{y}\text{As}_{1-y}$ “W” Quantum Wells for GaAs-Based Telecom Lasers

Zoe C. M. Davidson,Judy M. Rorison, Stephen J. Sweeney, Christopher A. Broderick

2022 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)（2022）

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摘要

We theoretically analyse strain-compensated $\text{GaAs}_{1-x}\text{Bi}_{x}/\text{GaN}_{y}\text{As}_{1-y}$ “W-type” quantum wells, demonstrating a viable approach to achieve efficient GaAs-based 1.3 and $1.55\ \mu \mathrm{m}$ lasers in which non-radiative Auger recombination is expected to be mitigated by type-II band offsets. © 2022 The Author(s)

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关键词

Quantum Wells,Non-radiative Recombination,Band Offset,Auger Recombination,Layer Thickness,Band Gap,Band Structure,Result Of Reduction,Energy Reduction,Carrier Density,Large Band Gap,Central Layer,Bandgap Reduction,Material Gain,Atomic Calculations,Optical Gain,Gain Spectrum

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