-Ga₂O₃ Schottky Barrier Diode with Ion Beam Sputter-Deposited Semi-Insulating Layer

Vertical Schottky barrier diodes based on an ion beam sputter (IBS)-deposited beta-Ga2O3 film on a single-crystalline ((2) over bar 01) unintentionally doped (UID) beta-Ga2O3 with a Ni contact were developed. To form ohmic Ti/Ni contacts, the IBS-Ga2O3/UID beta-Ga2O3 structures were wet-etched, and an indium tin oxide (ITO) intermediate semiconductor layer (ISL) was deposited on the opposite surface of the UID beta-Ga2O3. The IBS-deposited Ga2O3 layer was polycrystalline and semi-insulating. Low leakage currents, rectification ratios of 3.9 x 10(8) arb. un. and 3.4 x 10(6) arb. un., ideality factors of 1.43 and 1.24, Schottky barrier heights of 1.80 eV and 1.67 eV as well as breakdown voltages of 134 V and 180 V were achieved for diodes without and with ITO-ISL, respectively. The surface area of the IBS-Ga2O3 film acted as a thin dielectric layer and, together with the preliminary wet etching, provided low leakage currents and relatively high Schottky barrier heights. Diodes with a Schottky barrier based on a Ni/IBS-deposited Ga2O3 film contact were demonstrated for the first time.