Preparation and Characterization of BaTiO3/Nb: SrTiO3/La0.65 Sr0.35 MnO3Heterostructure Ferroelectric Thin Films

BaTiO 3 ferroelectric materials are good candidates for the construction of next-generation non-volatile memories and high dielectric constant capacitors, which have attracted considerable attention from both academia and industry. Thin film oxides comprising BaTiO3/Nb:SrTiO3/La0.65Sr0.35MnO3 were deposited on SrTiO3 substrates through a pulsed laser deposition system. The ferroelectric and fatigue properties of these films were systematically investigated, revealing residual polarization values (2Pr) of up to 20.256µC/cm ² and saturation polarization values(2Ps) of up to 47.802µC/cm ² . Incorporating Nb:SrTiO3/La0.65Sr0.35MnO3 heterojunction oxide bottom electrodes mitigates the generation of oxygen vacancies at the electrode-film interface, resulting in enhanced device stability. Additionally, the system exhibits remarkable stability, enduring 10 ¹⁰ stable cyclic cycles, and demonstrating favorable fatigue characteristics.