Fabrication and Characterization of High Indium In0.7Ga0.3As Channel MHEMT on GaAs Substrate

In this work, we have successfully developed high indium content In 0.7 Ga 0.3 As channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. Through experimental investigations, we have employed high indium content as channel materials to optimize device performance, including DC and microwave characteristics. The fabricated mHEMT with a gate length of 0.9 μ m and a gate width of 50 μm exhibits excellent DC and logic characteristics such as V T =-2.33V,gm= 376 mS/mm, the maximum I DS was measured to be 512 mA/mm at V GS =0.2V and V DS =2.5V. Furthermore, the device exhibits exceptional high-frequency capabilities, such as f T /f max =20.5/49.9 GHz at V DS =2.0V.