Properties of Erbium-Doped Silicon Oxycarbide Thin Films

This research paper presents findings on the properties of erbium ions incorporated within an amorphous silicon oxycarbide host matrix. A special analysis is made on photoluminescence emission. The experimental samples were prepared using tetraethoxysilane and erbium oxide as reagents via Catalytic chemical vapor deposition. Notably, a unique preparation method was employed for thin films obtention, avoiding plasma damage, which had not been utilized for this purpose previously. One of the most important accomplishments of this study consists in achieving a broad band PL emission centered at 580 nm, which is attributed to the incorporation of erbium ions into a silicon oxycarbide matrix. The obtained results indicate a direct correlation between the photoluminescence emission evolution and the presence of erbium oxide used during the deposition process. The observed photoluminescence emission is attributed to the formation of erbium-silica-based complexes that facilitate energy transfer to the erbium ions. This research opens new possibilities in areas such as optoelectronics, sensing, and telecommunications. The findings obtained have numerous potential applications, particularly in advancing the design of LEDs, lasers, and waveguides. Erbium was incorporated in a silicon oxycarbide host matrix.Properties of Erbium were modified using silicon oxycarbide as a matrix.Luminescence enhancement of Erbium ions was achieved.